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IXTH110N25T
IXTV110N25TS
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 Outline
g fs
C iss
V DS = 10V, I D = 0.5 ? I D25 , Note 1
65
110
9400
S
pF
C oss
C rss
V GS = 0V, V DS = 25V, f = 1MHz
850
55
pF
pF
1
2
3
?P
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
19
27
60
27
ns
ns
ns
ns
e
Q g(on)
157
nC
Terminals: 1 - Gate
2 - Drain
Q gs
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
40
nC
3 - Source
Q gd
R thJC
R thCS
50
0.25
nC
0.18 ° C/W
° C/W
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
b 1.0 1.4
.040 .055
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
Source-Drain Diode
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.177
.140 .144
0.232 0.252
I S
I SM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
110
350
A
A
R 4.32 5.49
S 6.15 BSC
.170 .216
242 BSC
V SD
t rr
I RM
Q RM
I F = 55A, V GS = 0V, Note 1
I F = 55A, -di/dt = 250A/ μ s,
V R = 100V, V GS = 0V
170
27
2.3
1.2
V
ns
A
μ C
PLUS220SMD Outline
Notes:
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2. On through-hole package, R DS(ON) kelvin test contact location must be
5mm or less from the package body.
Terminals: 1 - Gate 2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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